Process for producing semiconductor article using graded epitaxial growth

ABSTRACT

A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si 1−x Ge x  (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si 1−y Ge y  layer, a thin strained Si 1−z Ge z  layer and another relaxed Si 1−y Ge y  layer. Hydrogen ions are then introduced into the strained Si z Ge z  layer. The relaxed Si 1−y Ge y  layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si 1−y Ge y  layer remains on the second substrate. In another exemplary embodiment, a graded Si 1−x Ge x  is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.

PRIORITY INFORMATION

This application is a divisional of application Ser. No. 09/928,126,filed on Aug. 10, 2001 now U.S. Pat. No. 6,573,126, which claimspriority from provisional application Serial No. 60/225,666, filed Aug.16, 2000, now expired, the entire disclosures of which are incorporatedby reference herein.

BACKGROUND OF THE INVENTION

The present invention relates to a production of a general substrate ofrelaxed Si_(1−x)Ge_(x)-on-insulator (SGOI) for various electronics oroptoelectronics applications, and the production of monocrystallineIII-V or II-VI material-on-insulator substrate.

Relaxed Si_(1−x)Ge_(x)-on-insulator (SGOI) is a very promisingtechnology as it combines the benefits of two advanced technologies: theconventional SOI technology and the disruptive SiGe technology. The SOIconfiguration offers various advantages associated with the insulatingsubstrate, namely reduced parasitic capacitances, improved isolation,reduced short-channel-effect, etc. High mobility strained-Si,strained-Si_(1−x)Ge_(x) or strained-Ge MOS devices can be made on SGOIsubstrates.

Other III-V optoelectronic devices can also be integrated into the SGOIsubstrate by matching the lattice constants of III-V materials and therelaxed Si_(1−x)Ge_(x). For example a GaAs layer can be grown onSi_(1−x)Ge_(x)-on-insulator where x is equal or close to 1. SGOI mayserve as an ultimate platform for high speed, low power electronic andoptoelectronic applications.

SGOI has been fabricated by several methods in the prior art. In onemethod, the separation by implantation of oxygen (SIMOX) technology isused to produce SGOI. High dose oxygen implant was used to bury highconcentrations of oxygen in a Si_(1−x)Ge_(x) layer, which was thenconverted into a buried oxide (BOX) layer upon annealing at hightemperature (for example, 1350° C.). See, for example, Mizuno et al.IEEE Electron Device Letters, Vol. 21, No. 5, pp. 230-232, 2000 andIshilawa et al. Applied Physics Letters, Vol. 75, No. 7, pp. 983-985,1999. One of the main drawbacks is the quality of the resultingSi_(1−x)Ge_(x) film and BOX. In addition, Ge segregation during hightemperature anneal also limits the maximum Ge composition to a lowvalue.

U.S. Pat. Nos. 5,461,243 and 5,759,898 describe a second method, inwhich a conventional silicon-on-insulator (SOI) substrate was used as acompliant substrate. In the process, an initially strainedSi_(1−x)Ge_(x) layer was deposited on a thin SOI substrate. Upon ananneal treatment, the strain was transferred to the thin silicon filmunderneath, resulting in relaxation of the top Si_(1−x)Ge_(x) film. Thefinal structure is relaxed-SiGe/strained-Si/insulator, which is not anideal SGOI structure. The silicon layer in the structure is unnecessary,and may complicate or undermine the performance of devices built on it.For example, it may form a parasitic back channel on this strained-Si,or may confine unwanted electrons due to the band gap offset between thestrained-Si and SiGe layer.

U.S. Pat. Nos. 5,906,951 and 6,059,895 describe the formation of asimilar SGOI structure: strained-layer(s)/relaxed-SiGe/Si/insulatorstructure. The structure was produced by wafer bonding and etch backprocess using a P⁺⁺ layer as an etch stop. The presence of the siliconlayer in the above structure may be for the purpose of facilitatingSi-insulator wafer bonding, but is unnecessary for ideal SGOIsubstrates. Again, the silicon layer may also complicate or underminethe performance of devices built on it. For example, it may form aparasitic back channel on this strained-Si, or may confine unwantedelectrons due to the band gap offset between the strained-Si and SiGelayer. Moreover, the etch stop of P⁺⁺ in the above structure is notpractical when the first graded Si_(1−y)Ge_(y) layer described in thepatents has a y value of larger than 0.2. Experiments from researchshows Si_(1−y)Ge_(y) with y larger than 0.2 is a very good etch stop forboth KOH and TMAH, as described in a published PCT application WO99/53539. Therefore, the KOH will not be able to remove the first gradedSi_(1−y)Ge_(y) layer and the second relaxed SiGe layer as described inthe patents.

Other attempts include re-crystallization of an amorphous Si_(1−x)Ge_(x)layer deposited on the top of SOI (silicon-on-insulator) substrate,which is again not an ideal SGOI substrate and the silicon layer isunnecessary, and may complicate or undermine the performance of devicesbuilt on it. Note Yeo et al. IEEE Electron Device Letters, Vol. 21, No.4, pp. 161-163, 2000. The relaxation of the resultant SiGe film andquality of the resulting structure are main concerns.

From the above, there is a need for a simple technique for relaxed SGOIsubstrate production, a need for a technique for production of highquality SGOI and other III-V material-on-insulator, and a need for atechnique for wide range of material transfer.

SUMMARY OF THE INVENTION

According to the invention, there is provided an improved technique forproduction of wide range of high quality material is provided. Inparticular, the production of relaxed Si_(1−x)Ge_(x)-on-insulator (SGOI)substrate or relaxed III-V or II-VI material-on-insulator, such asGaAs-on-insulator, is described. High quality monocrystalline relaxedSiGe layer, relaxed Ge layer, or other relaxed III-V material layer isgrown on a silicon substrate using a graded Si_(1−x)Ge_(x) epitaxialgrowth technique. A thin film of the layer is transferred into anoxidized handle wafer by wafer bonding and wafer splitting usinghydrogen ion implantation. The invention makes use of the gradedSi_(1−x)Ge_(x) buffer structure, resulting in a simplified and improvedprocess.

The invention also provides a method allowing a wide range of devicematerials to be integrated into the inexpensive silicon substrate. Forexample, it allows production of Si_(1−x)Ge_(x)-on-insulator with widerange of Ge concentration, and allows production of many III-V or II-VImaterials on insulator like GaAs, AlAs, ZnSe and InGaP. The use ofgraded Si_(1−x)Ge_(x) buffer in the invention allows high qualitymaterials with limited dislocation defects to be produced andtransferred. In one example, SGOI is produced using a SiGe structure inwhich a region in the graded buffer can act as a natural etch stop.

The invention provides a process and method for producingmonocrystalline semiconductor layers. In an exemplary embodiment, agraded Si_(1−x)Ge_(x) (x increases from 0 to y) is deposited on a firstsilicon substrate, followed by deposition of a relaxed Si_(1−y)Ge_(y)layer, a thin strained Si_(1−z)Ge_(z) layer and another relaxedSi_(1−y)Ge_(y) layer. Hydrogen ions are then introduced into thestrained Si_(1−z)Ge_(z) layer. The relaxed Si_(1−y)Ge_(y) layer isbonded to a second oxidized substrate. An annealing treatment splits thebonded pair at the strained Si layer, whereby the second relaxedSi_(1−y)Ge_(y) layer remains on said second substrate.

In another exemplary embodiment, a graded Si_(1−x)Ge_(x) is deposited ona first silicon substrate, where the Ge concentration x is increasedfrom 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Gebuffer. As the lattice constant of GaAs is close to that of Ge, GaAs hashigh quality with limited dislocation defects. Hydrogen ions areintroduced into the relaxed GaAs layer at the selected depth. Therelaxed GaAs layer is bonded to a second oxidized substrate. Anannealing treatment splits the bonded pair at the hydrogen ion richlayer, whereby the upper portion of relaxed GaAs layer remains on saidsecond substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1C are block diagrams showing the process of producing a SGOIsubstrate in accordance with the invention;

FIGS. 2A and 2B are infrared transmission images of an as-bonded waferpair and a final SGOI substrate after splitting, respectively;

FIG. 3 is a TEM cross-section view of a SiGe layer that was transferredonto the top of a buried oxide;

FIG. 4 is an AFM for a transferred SGOI substrate showing surfaceroughness; and

FIGS. 5-8 are block diagrams of various exemplary embodimentssemiconductor structures in accordance with the invention.

DETAILED DESCRIPTION OF THE INVENTION

An example of a process in which SGOI is created by layer transfer isdescribed. The experiment was performed in two stages. In the firststage, heteroepitaxial SiGe layers are formed by a graded epitaxialgrowth technology. Starting with a 4-inch Si (100) donor wafer 100, alinearly stepwise compositionally graded Si_(1−x)Ge_(x) buffer 102 isdeposited with CVD, by increasing Ge concentration from zero to 25%.Then a 2.5 μm relaxed Si_(0.75)Ge_(0.25) cap layer 104 is deposited withthe final Ge composition, as shown in FIG. 1A.

The relaxed SiGe cap layer has high quality with very low dislocationdefect density (less than 1E6/cm²), as the graded buffer accommodatesthe lattice mismatch between Si and relaxed SiGe. A thin layer of thishigh quality SiGe will be transferred into the final SGOI structure. Thesurface of the as-grown relaxed SiGe layer shows a high roughness around11 nm to 15 nm due to the underlying strain fields generated by misfitdislocations at the graded layer interfaces and thus chemical-mechanicalpolishing (CMP) is used to smooth the surface. In the second stage, thedonor wafer is implanted with hydrogen ion (100 keV, 5E16 H⁺/cm²) toform a buried hydrogen-rich layer. After a surface clean step in amodified RCA solution, it is bonded to an oxidized 106 Si handle wafer108 at room temperature as shown in FIG. 1B.

The wafer bonding is one of the key steps, and the bonding energy shouldbe strong enough in order to sustain the subsequent layer transfer inthe next step. Good bonding requires a flat surface and a highlyhydrophilic surface before bonding. On the other hand, the buried oxidein the final bonded structure is also required to have good electricalproperties as it will influence the final device fabricated on it. Inthe conventional Si film transfer, thermal oxide on the donor wafer iscommonly used before H⁺ implantation and wafer bonding, which becomesthe buried oxide in the resulting silicon-on-insulator structure.

The thermal oxide of the Si donor wafer meets all the requirements, asit has good electrical properties, has flat surface and bonds very wellto the handle wafer. Unlike the Si, however, the oxidation of SiGe filmresults in poor thermal oxide quality, and the Ge segregation duringoxidation also degrades the SiGe film. Therefore the thermal oxide ofSiGe is not suitable for the SGOI fabrication. In one exemplaryexperiment the SiGe film will be directly bonded to an oxidized Sihandle wafer. The high quality thermal oxide in the handle wafer willbecome the buried oxide in the final SGOI structure.

Having a flat surface after a CMP step, the SiGe wafer went through aclean step.

Compared to Si, one difficulty of SiGe film is that, SiGe surfacebecomes rougher during the standard RCA clean, as the NH₄OH in RCA1solution etches Ge faster than Si. Rough surface will lead to weakbonding as the contact area is reduced when bonded to the handle wafer.In this exemplary embodiment, H₂SO₄—H₂O₂ solution is used in the placeof RCA1, which also meets the clean process requirement for thesubsequent furnace annealing after bonding. The SiGe surface afterH₂SO₄—H₂O₂ clean shows better surface roughness compared to RCA1.

After this modified clean procedure, the SiGe wafer is dipped in thediluted HF solution to remove the old native oxide. It is then rinsed inDI water thoroughly to make the surface hydrophilic by forming a freshnew native oxide layer that is highly active. After spinning dry, theSiGe wafer is bonded to an oxidized handle wafer at room temperature,and then annealed at 600° C. for 3 hours. During anneal the bonded pairsplit into two sheets along the buried hydrogen-rich layer, and a thinrelaxed Si_(0.75)Ge_(0.25) film 110 is transferred into the handlewafer, resulting in a SGOI substrate 112, as shown in FIG. 1B. A final850° C. anneal improves the Si_(0.75)Ge_(0.25)/SiO₂ bond. Thereafter,device layers 114 can be processed on the SGOI substrate 112 as shown inFIG. 1C.

FIGS. 2A and 2B are infrared transmission images of the as-bonded waferpair and the final SGOI substrate after splitting, respectively. Toinvestigate the surface of the as-transferred SGOI substrate,transmission electron microscopy (TEM) and atomic force microscopy (AFM)were used. The TEM cross-section view in FIG. 3 shows a ˜640 nm SiGelayer was transferred onto the top of a 550 nm buried oxide (BOX).Surface damage is also shown clearly at the splitting surface with adamage depth of ˜100 nm.

FIG. 4 shows a surface roughness of 11.3 nm in an area of 5×5 μm² by AFMfor the as-transferred SGOI. The data is similar to those fromas-transferred silicon film by smart-cut process, and suggests that atop layer of about 100 nm should be removed by a final CMP step. AfterSiGe film transferring, only a thin relaxed SiGe film is removed and thedonor wafer can be used again for a donor wafer. Starting from thisgeneral SGOI substrate, various device structures can be realized bygrowing one or more device layers on the top, as shown in FIG. 2C.

Electrical evaluation is in progress by growing a strain Si layer on thetop of this SGOI substrate followed by fabrication of strained Sichannel devices.

Bond strength is important to the process of the invention. AFMmeasurements were conducted to investigate the SiGe film surfaceroughness before bonding under different conditions. One experiment isdesigned to investigate how long the SiGe surface should be polished tohave smooth surface and good bond strength, since the surface of theas-grown relaxed SiGe layer has a high roughness around 11 nm to 15 nm.Several identical 4-inch Si wafers with relaxed Si_(0.75)Ge_(0.25) filmswere CMPed with optimized polishing conditions for different times.Using AFM, the measured surface mircoroughness RMS at an area of 10μm×10 μm is 5.5 Å, 4.5 Åand 3.8 Å, for wafer CMPed for 2 min., 4 min.and 6 min. respectively. After bonding to identical handle wafers, thetested bond strength increases with decreasing RMS. A CMP time of 6 min.is necessary for good strength.

In another experiment, two identical 4-inch Si wafers with relaxedSi_(0.75)Ge_(0.25) films were CMPed for 8 min. After two cleaning stepsin H₂SO₄:H₂O₂ solution and one step in diluted HF solution, one waferwas put in a new H₂SO₄:H₂O₂ (3:1) solution and another in a newNH₄OH:H₂O₂:H₂O (1:1:5), i.e. the conventional RCA1 solution, both for 15min. The resultant wafers were tested using AFM. The wafer afterH₂SO₄:H₂O₂ solution shows a surface roughness RMS of 2 Å at an area of 1μm×1 μm, which after NH₄OH:H₂O₂:H₂O shows 4.4 Å. Clearly, theconventional RCA clean roughens the SiGe surface significantly, andH₂SO₄:H₂O₂ should be used for SiGe clean.

In yet another experiment, the clean procedure is optimized beforebonding. For direct SiGe wafer to oxidized handle wafer bonding(SiGe-oxide bonding), several different clean procedures were tested. Ithas been found that the H₂SO₄:H₂O₂ (2˜4:1) solution followed by DI waterrinse and spin dry gives good bond strength. Alternatively, one can alsodeposit an oxide layer on the SiGe wafer and then CMP the oxide layer.In this case SiGe/oxide is bonded to an oxidized handle wafer, i.e.oxide-oxide bonding. Among different clean procedures, it was found thatNH₄OH:H₂O₂:H₂O clean and DI water rinse following by diluted HF, DIwater rinse and spin dry gives very good bond strength.

FIG. 5 is a block diagram of an exemplary embodiment of a semiconductorstructure 500 in accordance with the invention. A graded Si_(1−x)Ge_(x)buffer layer 504 is grown on a silicon substrate 502, where the Geconcentration x is increased from zero to a value y in a stepwisemanner, and y has a selected value between 0 and 1. A second relaxedSi_(1−y)Ge_(y) layer 506 is then deposited, and hydrogen ions areimplanted into this layer with a selected depth by adjustingimplantation energy, forming a buried hydrogen-rich layer 508. The waferis cleaned and bonded to an oxidized handle wafer 510. An annealtreatment at 500˜600° C. splits the bonded pair at the hydrogen-richlayer 508. As a result, the upper portion of the relaxed Si_(1−y)Ge_(y)layer 506 remains on the oxidized handle wafer, forming a SGOIsubstrate. The above description also includes production ofGe-on-insulator where y=1.

During the wafer clean step prior to bonding, the standard RCA clean forthe silicon surface is modified. Since the NH₄OH in standard RCA1solution etches Ge faster than Si, the SiGe surface will become rough,leading to a weak bond. A H₂SO₄—H₂O₂ solution is used in the place ofRCA1, which also meets the clean process requirement for the subsequentfurnace annealing after bonding. The SiGe surface after the H₂SO₄—H₂O₂clean showed better surface roughness compared to RCA1. After themodified RCA clean, the wafers are then immersed in another freshH₂SO₄—H₂O₂ solution for 10 to 20 min. H₂SO₄—H₂O₂ renders the SiGesurface hydrophilic. After a rinse in DI wafer and spin drying, the SiGewafer is bonded to an oxidized handle wafer at room temperatureimmediately, and then annealed at 500˜600° C. for wafer splitting.

FIG. 6 is a block diagram of another exemplary embodiment of asemiconductor structure 600. The structure 600 includes a gradedSi_(1−x)Ge_(x) buffer layer 604 grown on a silicon substrate 602, wherethe Ge concentration x is increased from zero to 1. Then a relaxed pureGe layer 606 and a III-V material layer 608, such as a GaAs layer, areepitaxially grown on the Ge layer. Hydrogen ions are implanted into theGaAs layer 608 with a selected depth by adjusting implantation energy,forming a buried hydrogen-rich layer 610. The wafer is cleaned andbonded to an oxidized handle wafer 612. An anneal treatment splits thebonded pair at the hydrogen-rich layer 610. As a result, the upperportion of the GaAs layer 608 remains on the oxidized handle wafer,forming a GaAs-on-insulator substrate.

FIG. 7. is a block diagram of yet another exemplary embodiment of asemiconductor structure 700. A graded Si_(1−x)Ge_(x) buffer layer 704 isgrown on a silicon substrate 702, where the Ge concentration x isincreased from zero to a selected value y, where y is less than 0.2. Asecond relaxed Si_(1−z)Ge_(z) layer 706 is deposited, where z is between0.2 to 0.25. Hydrogen ions are implanted into the graded Si_(1−x)Ge_(x)buffer layer 704 with a selected depth, forming a buried hydrogen-richlayer 708 within layer 704. The wafer is cleaned and bonded to anoxidized handle wafer 710. An anneal treatment at 500˜600° C. splits thebonded pair at the hydrogen-rich layer 708.

As a result, the upper portion of the graded Si_(1−x)Ge_(x) buffer layer704 and the relaxed Si_(1−z)Ge_(z) layer 706 remains on the oxidizedhandle wafer 710. The remaining graded Si_(1−x)Ge_(x) buffer layer 704is then selectively etched by either KOH or TMAH. KOH and TMAH etchSi_(1−x)Ge_(x) fast when x is less 0.2, but becomes very slow when x islarger than 0.2. Thus, the graded Si_(1−x)Ge_(x) buffer layer 704 can beetched selectively, leaving the relaxed Si_(1−z)Ge_(z) layer 706 on theinsulating substrate 710 and forming a relaxed SGOI substrate. In thisprocess, the thickness of the relaxed Si_(1−z)Ge_(z) film 706 on thefinal SGOI structure is defined by film growth, which is desired in someapplications.

FIG. 8 is a block diagram of yet another exemplary embodiment of asemiconductor structure 800. A graded Si_(1−x)Ge_(x) buffer layer 804 isgrown on a silicon substrate 802, where the Ge concentration x isincreased from zero to a selected value y between 0 and 1. A secondrelaxed Si_(1−y)Ge_(y) layer 806 is deposited, followed by a strainedSi_(1−z)Ge_(z) layer 808 and another relaxed Si_(1−y)Ge_(y) layer 810.The thickness of layers 806, 808, and 810, and the value z are chosensuch that the Si_(1−z)Ge_(z) layer 808 is under equilibrium strain statewhile the Si_(1−y)Ge_(y) layers 806 and 810 remain relaxed. In oneoption, hydrogen ions may be introduced into the strained Si_(1−z)Ge_(z)layer 808, forming a hydrogen-rich layer 812. The wafer is cleaned andbonded to an oxidized handle wafer 814. The bonded pair is thenseparated along the strained Si_(1−z)Ge_(z) layer 808.

Since the strain makes the layer weaker, the crack propagates along thislayer during separation. The separation can be accomplished by a varietyof techniques, for example using a mechanical force or an annealtreatment at 500˜600° C. when the hydrogen is also introduced. See, forexample, U.S. Pat. Nos. 6,033,974 and 6,184,111, both of which areincorporated herein by reference. As a result, the relaxedSi_(1−y)Ge_(y) layer 810 remains on the oxidized handle wafer, forming arelaxed SGOI substrate. The thickness of layers 806, 808, and 810, andthe value z may also be chosen such that there are a good amount ofdislocations present in the Si_(1−z)Ge_(z) layer 808 while the topSi_(1−y)Ge_(y) layer 810 remains relaxed and having high quality andlimited dislocation defects.

These dislocation defects in the Si_(1−z)Ge_(z) layer 808 can then actas hydrogen trap centers during the subsequent step of introducing ions.The hydrogen ions may be introduced by various ways, such as ionimplantation or ion diffusion or drift by means of electrolyticcharging. The value of z may be chosen in such a way that the remainingSi_(1−z)Ge_(z) layer 808 can be etched selectively by KOH or TMAH. Thelayers 806 and 810 may also be some other materials, for example pureGe, or some III-V materials, under the condition that the Geconcentration x in the graded Si_(1−x)Ge_(x) buffer layer 804 isincreased from zero to 1.

After all the semiconductor-on-insulator substrate obtained by theapproaches described above, various device layers can be further grownon the top. Before the regrowth, CMP maybe used to polish the surface.

Although the present invention has been shown and described with respectto several preferred embodiments thereof, various changes, omissions andadditions to the form and detail thereof, may be made therein, withoutdeparting from the spirit and scope of the invention.

What is claimed is:
 1. A method for forming a semiconductor layer, themethod comprising: forming a first heterostructure by: forming a gradedSi_(1−x)Ge_(x) buffer layer on a first substrate, the gradedSi_(1−x)Ge_(x) buffer layer having a Ge concentration x increasing fromzero to a value y; forming a relaxed Si_(1−y)Ge_(y) layer on the gradedSi_(1−x)Ge_(x) buffer layer; forming a separation layer on the relaxedSi_(1−y)Ge_(y) layer; and forming a second relaxed layer over theseparation layer; bonding the first heterostructure to a secondsubstrate to define a second heterostructure; and splitting the secondheterostructure along the separation layer, wherein the second relaxedlayer remains on the second substrate after the second heterostructureis split.
 2. The method of claim 1, wherein at least one of the relaxedlayer and the separation layer comprises at least one material selectedfrom the group consisting of Si_(1−w)Ge_(w), Ge, GaAs, AlAs, ZnSe andInGaP.
 3. The method of claim 1, further comprising: forming at leastone of a device layer and a device, after the step of forming the secondrelaxed layer.
 4. The method of claim 1, further comprising: planarizingthe second relaxed layer before bonding the first heterostructure to thesecond substrate.
 5. The method of claim 1, further comprising: cleaningat least one of the first heterostructure and the second substratebefore the step of bonding.
 6. The method of claim 1, wherein splittingthe second heterostructure comprises annealing.
 7. The method of claim1, further comprising: removing at least one of (i) a remaining portionof the separation layer, and (ii) a top portion of the second relaxedlayer from the second substrate after the step of splitting.
 8. Themethod of claim 1, further comprising: forming at least one of a devicelayer and a device after the step of splitting.
 9. The method of claim1, further comprising: after splitting the second heterostructure alongthe separation layer, planarizing a portion of the first heterostructuresplit from the second substrate; and forming new layers on the remainingfirst heterostructure portion.
 10. The method of claim 1 wherein theseparation layer comprises a strained layer.
 11. The method of claim 1,further comprising: introducing ions into the separation layer, prior tobonding the first heterostructure to the second substrate.
 12. Themethod of claim 1 wherein the separation layer comprises a defect layer.13. The method of claim 1 wherein the second substrate comprisessilicon.
 14. The method of claim 1 wherein the second substratecomprises an insulator layer.
 15. The method of claim 1 wherein bondingthe first heterostructure to the second substrate comprises bonding tothe insulator layer.
 16. The method of claim 10, wherein the strainedlayer comprises at least one of Si_(1−z)Ge_(z) with z≠y and a III-Vmaterial.
 17. The method of claim 11, further comprising: forming aninsulating layer before the step of introducing ions.
 18. The method ofclaim 11, further comprising: planarizing the second relaxed layerbefore the step of introducing ions.
 19. The method of claim 11, whereinthe ions comprise at least one of hydrogen H⁺ ions and H₂ ⁺ ions.